Pristovsek・Markus （私講師、博士） プリストフセク・マーコス
	III-Vの半導体の(001)や(113)などの表面を攻究している。エピタキシーも攻究する。 反射率差分分光法(RAS)をたくさん使って、RHEEDやSTMでも知識がある。

趣味

• 自転車で乗ったり、泳いだり、自然や公園の中で遊んだりする。（ベルリンで帆走したり、フォークダンスをしたりした。）
• プログラミング (Atari STとWindowsとPalm (和英辞典と和独辞典がある)).
• SFを読んだり書いたりする。 (ここに短編小説が 600冊あるが、ドイツ語だけ: 私のドイツ語の SF&F-archive)
• ギターを弾く
• 帆船で行く（右の写真は"Falado von Rhodos"を見せる。この船で1994年に2月間、ヨーロッパからカリブ（アメリカ）まで１２人と行った。)
• スカウトをした"Graue Jungenschaft"
• . . .

経歴

名前はPristovsek・Markusで す。Pristovsek(プリストフセク）たぶんユゴスラビアから来た。 しかし、Pristovsekの家族は４００年間ぐらいドイツに住んでいる。

1970年6月9日にベルリンで生まれた。

1989年からベルリン工業大学で理学を勉強 した。
1995年から2001年までRichter先生のグループで博士コースをした。
計７年間Richter先生の研究グループと攻究をした。 とても楽しかった！MOVPEの仲間と一緒にこの写真を撮った。

2000年11月から2003年1月までつく ば市にある物質・材料研究機構の ナノデバイスグループで 攻究をした。

2003年1月にベルリンへ帰った。

2003年3月から2003年11月までベル リンのブラウン・フェルディナンドの超短波技術研究所で働いた。

2003年12月から母校のベルリン工業大学 で助教授とMOVPE班長の仕事をしている。新しい物質(InNや磁半導体)がテーマだ。

宛先

PRISTOVSEK, Markus
TU-Berlin EW 6-1
Institut für Festkörperphysik
Hardenbergstr. 36
10623 Berlin
RFA(ドイツ)

電話：+49-30-314-22745, Fax +49-30-314-21769

メール(英語): prissi@physik.tu-berlin.de
メール(日本語): prissi@infoseek.jp

論文と専門章

1. In-situ monitoring towards monolayer precision for III-V semiconductor growth
   M. Pristovsek
   Habilitation (大学教員資格), Technische Universität Berlin (2012)

2. Semiconductor Nanostructures
   M. Pristovsek, W. Richter
   (Springer, Berlin-Heidelberg-New York, 2008) 第3章, 67–86

3. Fundamental Growth Processes on Different Gallium Arsenide Surfaces in Metal-Organic Vapor Phase Epitaxy
   M. Pristovsek
   博士論文, Technische Universität Berlin (2000)

学術雑誌

4. Development of InAs quantum dots during growth on GaAs (001)
   M. Pristovsek, R. Kremzow, M. Kneissl
   Phys. Rev. Lett. (submitted)

5. Direct growth of In_xGa_1-xN on (0001) sapphire using metal-organic vapor phase epitaxy
   Duc V. Dinh, S. Solopow, C. Friedrich, S. Alame, M. Pristovsek, M. Kneissl
   J. Crystal Growth (submitted)

6. Wetting layer thickness of InGaN quantums dots on GaN (0001)
   M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret
   J. Crystal Growth (under revision)

7. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
   A. Kadir, K. Bellmann, T. Simoneit, M. Pristovsek, M. Kneissl
   phys. stat. sol. (a) (under revision)

8. Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy
   Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl
   J. Appl. Phys. (submitted)

9. Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
   S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, M. Weyers, J. Zweck, M. Kneissl
   J. Crystal Growth (accepted)

10. MOVPE growth of semipolar (11-22) AlN on (10-10) sapphire
    J. Stellmach, M. Frentrup, F. Mehnke, M. Pristovsek, T. Wernicke, M. Kneissl
    J. Crystal Growth 335 (2012) 59-62

11. Growth and Characterizations of Semipolar (11-22) InN
    Duc V. Dinh, D. Skuridina, S. Solopow, M. Frentrup, M. Pristovsek, P. Vogt, M. Kneissl, F. Ivaldi, S. Kret, A. Szczepanska
    J. Appl. Phys. 112 (2012) 013530

12. In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
    Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher
    Phys. Rev. B 86 (2012) 035308

13. Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
    S. Ploch, T. Wernicke, D. V. Dinh, M. Pristovsek, M. Kneissl
    J. Appl. Phys. 111 (2012) 033526

14. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE
    Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, M. Kneissl
    phys. stat. sol. (c) 9(3-4) (2012) 977-981

15. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
    M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, M. Kneissl
    J. Appl. Phys. 110 (2011) 073527

16. Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy
    A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, M. Kneissl
    J Crystal Growth 314 (2011) 40–45

17. Single phase 11-22 GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
    S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl
    J Crystal Growth 331 (2011) 25–28

18. Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE
    F. Ivaldi, J. Domagala, S. Kret, C. Meissner, M. Pristovsek, M. Högele, M. Kneissl
    Jap. J. Appl Phys. 50 (2011) 031004

19. Crystal orientation of GaN layers on (10-10) Sapphire
    M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (b) 248 (3) (2011) 583–587

20. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
    J. Stellmach, M. Pristovsek, . Savaş, J. Schlegel, E. Y. Yakovlev, M. Kneissl
    J. Crystal Growth 315 (2011) 229–232

21. Determination of the complex linear electro-optic coefficient of GaAs and InP
    M. Pristovsek
    phys. stat. sol. (b) 247 (2010) 1974–1978

22. Orientation control of GaN 11-22 and 10-13 grown on (10-10) sapphire by metal-organic vapor phase epitaxy
    S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
    J. Crystal Growth 312 (2010) 2171–2174

23. Growth of semipolar (10-1-3) InN on m-plane sapphire using metal-organic vapor phase epitaxy
    D. V. Dinh, M. Pristovsek, R. Kremzow, M. Kneissl
    phys. stats. sol. RRL 4 (2010) 127–129

24. Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source
    R. Kremzow, M. Pristovsek, J. Stellmach, . Savas, M. Kneissl
    J. Crystal Growth 312 (2010) 1983–1985

25. Shape of InN nanostructures on GaN (001)
    S. Ploch, C. Meißner, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S574–S577

26. Growth mode of InGaN on GaN (0001) in MOVPE
    M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S565–S569

27. Volmer-Weber growth mode on InN quantum dots on GaN (0001) by MOVPE
    C. Meißner, S.Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S545–S548

28. Growth and characterisation of manganese doped InAsP
    M. Pristovsek, C. Meißner, M. Kneissl, R. Jakomin, S. Vantaggio, L. Tarricone
    J. Crystal Growth 310 (2008) 5028–5031

29. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy
    C. Meissner, S. Ploch, M. Leyer, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4959–4962

30. The critical thickness of InGaN on (0001) GaN
    M. Leyer, J. Stellmach, C. Meissner, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4913–4915

31. Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy
    R. Kremzow, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4751–5753

32. Properties of InMnP (0 0 1) grown by MOVPE
    M. Pristovsek, A. Philippou, B. Rähmer, W. Richter
    J. Crystal Growth 310 (2008) 4046–4049

33. Segregation and desorption of antimony in InP in MOVPE
    S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, W. Richter
    J. Crystal Growth 298 (2007) 159–162

34. Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy
    C. Kaspari, M. Pristovsek, W. Richter
    J. Crystal Growth 298 (2007) 46–49

35. in-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy
    M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter
    J. Crystal Growth 298 (2007) 8–11

36. Modified STM images growth inside an MOCVD chamber
    M. Pristovsek
    compound semiconductor 11 (2006) 14–16

37. In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy
    B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter
    Appl. Phys. Lett. 89(6) (2006) 063108

38. InN growth on sapphire using different nitridation procedures
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    phys. stat. sol. (a) 203 (2006) 1622–1625

39. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    Crys. Res. Technol. 40(10-11) (2005) 993–996

40. A fast reflectance anisotropy spectrometer for in situ growth monitoring
    C. Kaspari, M. Pristovsek, W. Richter
    phys. stat. sol. (b) 242(13) (2005) 2561–2569

41. Growth of strained GaAsSb layers on GaAs (001) in MOVPE
    M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers
    J. Crystal Growth 276 (2005) 347–353

42. InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry
    M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U. Pohl, W. Richter
    J. Crystal Growth 272 (2004) 87–93

43. Nitrogen.arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE
    V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter
    J. Crystal Growth 272 (2004) 30–36

44. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)
    O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. D. Sole, W. Richter
    J. Phys.: Cond. Matter 16 (2004) S4367–S4374

45. In-situ study of low-temperature growth and Mn and Si and Sn doping of GaAs (001) in molecular beam epitaxy
    M. Pristovsek, S. Tsukamoto
    J. Crystal Growth 265 (2004) 425–433

46. Lateral short range ordering of step bunches in InGaAs/GaAs superlattices
    M. Hanke, M. Schmidbauer, R. Kühler, H. Kirmse, M. Pristovsek
    J. Appl. Phys. 95(4) (2004) 1736–1739

47. In-situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in MOVPE
    M. Pristovsek, M. Zorn, M. Weyers
    J. Crystal Growth 262 (2004) 78–83

48. Gallium-rich reconstructions on GaAs(001)
    M. Pristovsek, S. Tsukamoto, A. Ohtake, N. Koguchi, B. G. Orr, W. G. Schmidt, J. Bernholc
    phys. stat. sol. b 240 (2003) 91–98

49. In situ scanning tunneling microscopy of InAs quantum dots on GaAs(0 0 1) during molecular beam epitaxial growth
    G. R. Bell, M. Pristovsek, S. Tsukamoto, B. G. Orr, Y. Arakawa, N. Koguchi
    Surf. Sci. 544(2-3) (2003) 234–240

50. Ga-rich GaAs(0 0 1) surfaces observed by STM during high-temperature annealing in MBE
    S. Tsukamoto, M. Pristovsek, A. Ohtake, B. G. Orr, G. R. Bell, T. Ohno, N. Koguchi
    J. Crystal Growth 251 (2003) 46–50

51. Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties
    M. Pristovsek, S. Tsukamoto, B. Han, J.-T. Zettler, , W. Richter
    J. Crystal Growth 248 (2003) 254–258

52. Structure of Ga-stabilized GaAs(0 0 1) surfaces at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi
    Appl. Surf. Sci. 212-213 (2003) 146–150

53. Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
    M. Arisawa, S. Tsukamoto, M. Shimoda, M. Pristovsek, A. Nishida
    Jpn. J. Appl. Phys. 41(11A) (2002) L1197–L1199

54. Structure analysis of the Ga-stabilized GaAs(001) - c(8x2) surface at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi, M. Ozeki
    Phys. Rev. B 65 (2002) 233311

55. Real-time calibration of wafer temperature and growth rate and composition by optical in-situ techniques during Al_xGa_1-xAs growth in MOVPE
    K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter
    J. Crystal Growth 240 (2002) 87–97

56. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
    M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter, M. Zorn, M. Weyers
    phys. stat. sol. (a) 188 (2001) 1423–1429

57. In-situ Investigation of GaAs (001) Intrinsic Carbon p-Doping in Metal-organic Vapour Phase Epitaxy
    M. Pristovsek, B. Han, J.-T. Zettler, W. Richter
    J. Crystal Growth 221 (2000) 149–155

58. Surface structure of ordered InGaP(001): The (2x4) reconstruction
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    Phys. Rev. B 62(19) (2000) 12601–12604

59. Atomic structure and composition of the (2x4) reconstruction of InGaP(001)
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    J. Vac. Sci. Technol. B 18 (2000) 2210–2214

60. Diffusion of Ga on GaAs (113) in [1-10] direction in MOVPE
    M. Pristovsek, F. Poser, J.-T. Zettler, W. Richter
    Appl. Surf Sci. 166 (2000) 433–436

61. Dynamic Study of the Surfaces of (001) Gallium Arsenide in Metal-organic Vapour Phase Epitaxy during Arsenic Desorption
    M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter
    J. Appl. Phys. 87 (2000) 1245–1250

62. GaP(001) and InP(001): Reflectance Anisotropy and Surface Geometry
    N. Esser, W. Schmidt, J. Bernholc, A. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck
    J. Vac. Sci. Technol. B 17 (1999) 1691–1696

63. The (2x4) GaP(001) Surface: Atomic Structure and Optical Anisotropy
    A. Frisch, W. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter
    Phys. Rev. B 60(4) (1999) 2488–2494

64. Spectroscopic process sensors in MOVPE device production
    K. Haberland, P. Kurpas, M. Pristovsek, J.-T. Zettler, M. Weyers, W. Richter
    Appl. Phys. A 68 (1999) 309–313

65. Comparative study of the GaAs (113) and (115) and (001) and (11-5) and (11-3) and and (110) surfaces by atomic force microscopy and low energy electron diffraction and and reflectance anisotropy spectroscopy
    M. Pristovsek, H. Menhal, T. Schmidtling, N. Esser, W. Richter
    Microelectronics Journal 30 (1999) 449–453

66. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
    H. Hardtdegen, M. Pristovsek, H. Menhal, J.-T. Zettler, W. Richter, D. Schmitz
    J. Crystal Growth 195 (1998) 211–216

67. Response of the surface dielectric function to dynamic surfaces modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry
    J.-T. Zettler, M. Pristovsek, T. Trepk, A. Shkrebtii, E. Steimetz, M. Zorn, W. Richter
    Thin Solid Films 313-314 (1998) 537–543

68. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
    J.-T. Zettler, K. Haberland, M. Zorn, M. Pristovsek, W. Richter, P. Kurpas, , M. Weyers
    J. Crystal Growth 195 (1998) 151–162

69. Reconstructions of the GaAs (113) surface
    M. Pristovsek, H. Menhal, T. Wehnert, J.-T. Zettler, T. Schmidtling, N. Esser, W. Richter, C. Setzer, J. Platen, K. Jacobi
    J. Crystal Growth 195 (1998) 1–5

70. Photoluminescence scanning nearfield optical microscopy on III-V quantum dots
    D. Pahlke, F. Poser, E. Steimetz, M. Pristovsek, N. Esser, W. Richter
    phys. stat. sol. (a) 170 (1998) 401

71. Atomic structure of InP(001)-(2x4): A dimer reconstruction
    W. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter
    Phys. Rev. B. 57(23) (1998) 14596–14599

72. Ellipsometric and Reflectance-Anisotropy Measurements on Rotating Samples
    K. Haberland, O. Hunderi, M. Pristovsek, J.-T. Zettler, W. Richter
    Thin Solid Films 313-314 (1998) 620–624

73. Optical anisotropies of InP(001) surfaces
    C. Goletti, N. Esser, U. Resch-Esser, V. Wagner, J. Foeller, M. Pristovsek, W. Richter
    J. Appl. Phys. 81 (1997) 3611–3615

74. Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing
    D. Pahlke, J. Kinsky, C. Schultz, M. Pristovsek, M. Zorn, N. Esser, W. Richter
    Phys. Rev. B 56 (1997) R1661–R1663

75. In-situ surface passivation of III-V-semiconductors in MOVPE by amorphous As and P layers
    K. Knorr, M. Pristovsek, U. Resch-Esser, N. Esser, M. Zorn, W. Richter
    J. Crystal Growth 170 (1997) 230–236

76. Semiconductor Characterization - Present Status and Future Needs
    J.-T. Zettler, W. Richter, K. Ploska, M. Zorn, J. Rumberg, C. Meyne, M. Pristovsek
    (AIP Press Woodbury NY, 1996) 537–543

77. Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of MOVPE-grown samples
    N. Esser, U. Resch-Esser, M. Pristovsek, W. Richter
    Phys. Rev. B 53(20) (1996) R13257–R13259

78. Growth oscillations with monolayer periodicity monitored by ellipsometry during MOVPE of GaAs (001)
    J.-T. Zettler, T. Wethkamp, M. Zorn, M. Pristovsek, C. Meyne, K. Ploska, W. Richer
    Appl. Phys. Lett. 67 (1995) 3783–3785

79. Metalorganic Vapour Phase Epitaxial Growth on Vicinal GaAs (001) Surfaces Studied by Reflectance Anisotropy Spectroscopy
    K. Ploska, M. Pristovsek, W. Richter, J. Jönsson, I. Kamiya, J.-T. Zettler
    phys. stat. sol. (a) 152 (1995) 49–59

80. Reflectance Anisotropy Oscillations during MOCVD and MBE Growth of GaAs (001)
    J.-T. Zettler, J. Rumberg, K. Ploska, K. Stahrenberg, M. Pristovsek, W. Richter, M. Wassermeier, P. Schützendüwe, L. Däweritz
    phys. stat. sol. (a) 152 (1995) 35–47

81. Surface processes before and during growth of GaAs(001)
    K. Ploska, J.-T. Zettler, W. Richter, J. Jönsson, F. Reinhardt, J. Rumberg, M. Pristovsek, M. Zorn, D. Westwood, R. H. Williams
    J. Crystal Growth 145 (1994) 44–52

82. Efficiency of arsenic and phosphorous precursors investigated by reflectance anisotropy spectroscopy
    P. Kurpas, J. Jönsson, W. Richter, D. Gutsche, M. Pristovsek, M. Zorn
    J. Crystal Growth 145 (1994) 36–43

学会小論文 (extended abstracts):

Growth of AlGaN with high Al-content and high growth rates in a CCS reactor
J.Stellmach, Ö. Savaş, J. Schlegel, M. Pristovsek, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 155-158, B.07

Growth of InN on GaN by Metalorganic Vapor Phase Epitaxy using tertiary-butylhydrazine as alternative nitrogen source
R. Kremzow, M. Pristovsek, J. Stellmach, Ö. Savaş, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 233-236, C.07

2D-3D Transition and Relaxation During Strained Compound Semiconductor Growth
M. Pristovsek, M. Leyer, J. Stellmach, R. Kremzow, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 245-236, C.10

Growth of GaN on (10-10) (m-plane) sapphire by metalorganic vapor phase epitaxy
S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 317-320, D.07

Characterisation of MOVPE grown InGaN
M. Leyer, Ch. Meißner, M. Pristovsek, M. Kneissl
Proc. 12th EW-MOVPE workshop (2007) 255-256, G5

Formation of InAs Quantum Dots on GaAs:Si investigated with in-situ STM
R. Kremzow, M. Pristovsek, B. Rähmer, M. Breusing, M. Kneissl
Proc. 12th EW-MOVPE workshop (2007) 265-266, G8

In-situ Scanning Tunneling Microscopy during MOVPE
M. Pristovsek, B. Rähmer, M. Breusing, R. Kremzow, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 111-115, INV

A multichannel RAS setup for fast in situ measurements
Ch. Kaspari, M. Pristovsek, S. Weeke, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 155-157, C01

In-situ SPM Measurements during MOVPE
B. Rähmer, M. Breusing, R. Kremzow, M. Pristovsek, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 167-169, C04

InN growth on sapphire using different nitridation procedures
M. Drago, C. Werner, M. Pristovsek, U.-W. Pohl, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 431-433, H15

The Influence of GaAs (001) Surface Reconstruction on the Doping Induced Reflectance Anisotropy Signals
Markus Pristovsek, Shiro Tsukamoto, Nobuyuki Koguchi, Jerzy Bernholc, and Wolf Gero Schmidt
21st Electronics Materials Symposium, Izu-Nagaoka (2002), 257-258

Basic Studies on the Origin of the Optical Anisotropy of GaAs Surfaces
M. Pristovsek, S. Tuskamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter
6th Int. Symposium on Advanced Physical Fields, Tsukuba, (2001), 267-270

Study of Sulfur terminated InAs and GaAs (001)
Markus Pristovsek, Shiro Tsukamoto, Noboyuki Koguchi
8th Int. Conf. on the Formation of Semiconductor Interfaces, Sapporo, (2001), 202

The Origin of the Optical Anisotropy of Doped GaAs (001) Surfaces
M. Pristovsek, S. Tuskamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter
20th Electronics Materials Symposium, Nara (2001), 131-132

Formation of Mesoscopic Corrugation on (113) Surfaces - Molecular Beam Epitaxy versus Metal-Organic Vapour Phase Epitaxy
M. Pristovsek, S. Tsukamoto, N. Koguchi
28th Int. Symposium on Compound Semiconductors, Tokyo, (2001), 29

MOVPE of GaAsN on GaAs(001) using tertiarybutylhydrazine
T. Schmidtling, M. Klein, M. Pristovsek, K. Knorr, U. W. Pohl, W. Richter
Proc. 8th EW-MOVPE workshop (1999) 433-435, F1M10

Reconstruction and step-bunching on (001) GaAs
M. Pristovsek, F. Poser, J.-T. Zettler, W. Richter
Proc. 8th EW-MOVPE workshop (1999) 353-356, T2M5

Investigation of (n11) GaAs Surfaces with Reflectance Anisotropy Spectroscopy
M. Pristovsek, H. Menhal, J.-T. Zettler, W. Richter, C. Setzer, J. Plaaten, K. Jacobi
Proc. SIO-97 (1997) 96-97

Reflectance Anisotropy Spectroscopy Study of Decapped InP(100) Surfaces
C. Goletti, N. Esser, J. Foeller, M. Pristovsek, U. Resch-Esser, V. Wagner, W. Richter
15th General Conf. Condens. Mater. Div. EPS, Baveno-Stresa (1996)

招講演 (invited talks)

Growth of In(Ga)As and In(Ga)N Nanostructures by Metal-Organic Vapour Phase Epitaxy
2011 International Seminar at Anan National College of Technology, Anan, Japan

Growth and polarity control of InN grown by metal-organic vapour phase epitaxy
E-MRS Spring Meeting 2011 in Nizza, Frankreich

In-situ monitoring of doping with Reflectance Anisotropy Spectrocopy
3^rd NanoCharm Workshop on Non-Destructive Real Time Process Control 2010, Berlin

Metal-Organic Vapour Phase Epitaxy of Nitride Semiconductors
II^nd Rainbow-Workshop 2010 in Madrid, Spanien

Towards Atomic Resolution during Vapour Phase Epitaxial Growth
SemiconNano 2009, Anan, Japan

State of the Art of in-situ Monitoring in Metal Organic Vapour Phase Epitaxy
2007 International Seminar at Anan National College of Technology in Anan, Japan

Surface and thin film analysis during vapour phase epitaxial growth
13^th International Summer School on Crystal Growth (2007) in Salt Lake City, USA

in-situ STM in MOVPE - Promises, Problems, Pictures
13^th International Conference on MOVPE (2006) in Miyazaki, Japan

In-situ Scanning Tunneling Microscopy during MOVPE
11^th European Workshop on MOVPE (2005) in Lausanne, Schweiz

In-situ Reflectance Anisotropy Spectroscopy on III-V Semiconductors: Surfaces and Doping
1^st Optical Spectroscopy of Surfaces and Interfaces (OSI-2001) in Bonn, Deutschland

Back to the Kneissl group homepage